ESD11N5.0ST5G Datasheet - ON Semiconductor

ESD11N5.0ST5G ESD Protection Diodes

of survivability specs. © Semiconductor Components Industries, LLC, 2010 1 November, 2017 * Rev. 5 Publication Order Number: ESD11N5.0S/D ESD11N5.0ST5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clampin.

ESD11N5.0ST5G ESD Protection Diodes Micro Packaged Diodes for ESD Protection The ESD11N is designed to protect voltage sensitive components that require ultra low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, it is suited for use in high frequency designs such as USB 2.0 .

ESD11N5.0ST5G Features

* Low Capacitance 0.6 pF

* Low Clamping Voltage

* Small Body Outline Dimensions: 0.60 mm x 0.30 mm

* Low Body Height: 0.3 mm

* Stand

* off Voltage: 5.0 V

* Low Leakage

* Response Time is < 1 ns

* IEC61000

* 4

* 2 Level