Part number:
FCP600N65S3R0
Manufacturer:
File Size:
369.53 KB
Description:
N-channel mosfet.
* 700 V @ TJ = 150°C
* Typ. RDS(on) = 493 mW
* Ultra Low Gate Charge (Typ. Qg = 11 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 127 pF)
* 100% Avalanche Tested
* These Devices are Pb
* Free and are RoHS Compliant Applications
FCP600N65S3R0 Datasheet (369.53 KB)
FCP600N65S3R0
369.53 KB
N-channel mosfet.
📁 Related Datasheet
FCP600N60Z - N-Channel MOSFET
(Fairchild Semiconductor)
FCP600N60Z / FCPF600N60Z N-Channel MOSFET
March 2013
FCP600N60Z / FCPF600N60Z
N-Channel SuperFET® II MOSFET
600 V, 7.4 A, 600 mΩ Features
• 650 V @T.
FCP600N60Z - N-Channel MOSFET
(ON Semiconductor)
MOSFET – N-Channel, SUPERFET) II
600 V, 7.4 A, 600 mW
FCP600N60Z, FCPF600N60Z
Description SUPERFET II MOSFET is onsemi’s brand−new high voltage
super−.
FCP600N60Z - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FCP600N60Z
·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate dr.
FCP650N80Z - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤650mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche t.
FCP650N80Z - N-Channel MOSFET
(Fairchild Semiconductor)
FCP650N80Z — N-Channel SuperFET® II MOSFET
December 2015
FCP650N80Z
N-Channel SuperFET® II MOSFET
800 V, 10 A, 650 m
Features
• RDS(on) = 530 m.
FCP067N65S3 - Power MOSFET
(ON Semiconductor)
FCP067N65S3
MOSFET – Power, N-Channel, SUPERFET) III, Easy Drive
650 V, 44 A, 67 mW
Description SUPERFET III MOSFET is ON Semiconductor’s brand−new hi.
FCP067N65S3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220 packaging ·High speed switching ·Very high mutation ruggedness ·Easy to use ·100% avalanche .
FCP099N60E - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to.