FDB1D7N10CL7 - 100V 268A N-Channel Shielded Gate MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDB1D7N10CL7
Manufacturer	ON Semiconductor
File Size	349.38 KB
Description	100V 268A N-Channel Shielded Gate MOSFET
Datasheet	FDB1D7N10CL7 Datasheet
Additional preview pages of the FDB1D7N10CL7 datasheet.

Product details

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. state resistance and yet maintain superior switching performance with best in class soft body diode.

Features

Max RDS(on) = 1.75 mΩ at VGS = 10 V, ID = 100 A.
Max RDS(on) = 1.7 mΩ at VGS = 12 V, ID = 100 A.
Max RDS(on) = 1.65 mΩ at VGS = 15 V, ID = 100 A.
Max RDS(on) = 4.4 mΩ at VGS = 6 V, ID = 63 A.
50% Lower Qrr than Other MOSFET Suppliers.
Lowers Switching Noise/EMI.
ESD Protection Level: HBM > 4 kV, CDM > 2 kV.
MSL1 Robust Package Design.
100% UIL Tested.

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Published: Aug 26, 2025 |