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MOSFET – P-Channel, POWERTRENCH)
-40 V, -50 A, 12.3 mW
FDD4141
General Description This P−Channel MOSFET has been produced using onsemi’s
proprietary POWERTRENCH technology to deliver low RDS(on) and optimized BVDSS capability to offer superior performance benefit in the applications and optimized switching performance capability reducing power dissipation losses in converter/inverter applications.
Features
Max RDS(on) = 12.3 mW at VGS = −10 V, ID = −12.7 A Max RDS(on) = 18.0 mW at VGS = −4.5 V, ID = −10.