Datasheet4U Logo Datasheet4U.com

FDD4141 - P-Channel MOSFET

Datasheet Summary

Description

This P Channel MOSFET has been produced using onsemi’s proprietary POWERTRENCH technology to deliver low RDS(on) and optimized BVDSS capability to offer superior performance benefit in the applications and optimized switching performance capability reducing power dissipation losses in conver

Features

  • Max RDS(on) = 12.3 mW at VGS =.
  • 10 V, ID =.
  • 12.7 A.
  • Max RDS(on) = 18.0 mW at VGS =.
  • 4.5 V, ID =.
  • 10.4 A.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • This Device is Pb.
  • Free and is RoHS Compliant.

📥 Download Datasheet

Datasheet preview – FDD4141

Datasheet Details

Part number FDD4141
Manufacturer ON Semiconductor
File Size 406.47 KB
Description P-Channel MOSFET
Datasheet download datasheet FDD4141 Datasheet
Additional preview pages of the FDD4141 datasheet.
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
MOSFET – P-Channel, POWERTRENCH) -40 V, -50 A, 12.3 mW FDD4141 General Description This P−Channel MOSFET has been produced using onsemi’s proprietary POWERTRENCH technology to deliver low RDS(on) and optimized BVDSS capability to offer superior performance benefit in the applications and optimized switching performance capability reducing power dissipation losses in converter/inverter applications. Features  Max RDS(on) = 12.3 mW at VGS = −10 V, ID = −12.7 A  Max RDS(on) = 18.0 mW at VGS = −4.5 V, ID = −10.
Published: |