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FDD5690 - N-Channel MOSFET

FDD5690 Description

FDD5690 FDD5690 60V N-Channel PowerTrench® MOSFET General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

FDD5690 Features

* • 30 A, 60 V. RDS(ON) = 0.027Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V. • Low gate charge (23nC typical). • Fast switching speed. • High performance trench technology for extremely low RDS(ON). D D G G S TO-252 Absolute Maximum Ratings TC=25oC unless otherwise noted Symbol VDSS VGSS ID Par

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N-Channel MOSFET ON Semiconductor
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