FDD5690 - N-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDD5690
Manufacturer	ON Semiconductor
File Size	234.91 KB
Description	N-Channel MOSFET
Datasheet	FDD5690 Datasheet
Additional preview pages of the FDD5690 datasheet.

Product details

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Features

30 A, 60 V. RDS(ON) = 0.027Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V. Low gate charge (23nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). D D G G S TO-252 Absolute Maximum Ratings TC=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current -Continuous (Note 1) (Note 1a) PD TJ, Tstg Maximum Drain Current -Pulsed Maximum Power Dissipation @ TC = 25oC TA = 25oC TA =.

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Published: Dec 22, 2023 |