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FDMA420NZ N-Channel MOSFET

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Description

MOSFET * Single, N-Channel, 2.5 V, Specified, POWERTRENCH) 20 V, 5.7 A, 30 mW FDMA420NZ General .
This Single N. Channel MOSFET has been designed using onsemi’s advanced POWERTRENCH process to optimize the RDS(on) @ VGS = 2.

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Features

* RDS(on) = 30 mW @ VGS = 4.5 V, ID = 5.7 A
* RDS(on) = 40 mW @ VGS = 2.5 V, ID = 5.0 A
* Low Profile
* 0.8 mm Maximum
* in the New Package MicroFET 2x2 mm
* HBM ESD Protection Level > 2.5 kV Typical (Note 3)
* Free from Halogenated Compounds and

Applications

* Li
* lon Battery Pack MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDSS VGSS ID Drain
* Source Voltage Gate
* Source Voltage Drain Current
* Continuous (Note 1a)
* Pulsed 20 V ±12 V A 5.7 24 PD Power

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