FDMA430NZ N-Channel MOSFET

ON Semiconductor

Description

DATA SHEET www.onsemi.com MOSFET * Single, N-Channel, POWERTRENCH), 2.5 V Specified 30 V, 5.0 A, 40 mW FDMA430NZ General .
This Single N. Channel MOSFET has been designed using onsemi’s advanced POWERTRENCH process to optimize the RDS(on) @ VGS = 2.

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Datasheet Specifications

Part number: FDMA430NZ
Manufacturer: ON Semiconductor ↗
File Size: 235.14 KB
Datasheet: FDMA430NZ-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* RDS(on) = 40 mW at VGS = 4.5 V, ID = 5.0 A
* RDS(on) = 50 mW at VGS = 2.5 V, ID = 4.5 A
* Low Profile
* 0.8 mm Maximum in the New Package MicroFET 2x2 mm
* HBM ESD Protection Level > 2.5 kV Typical (Note 3)
* Free from Halogenated Compounds and Antim

Applications

* Li
* lon Battery Pack ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDSS VGSS ID Drain
* Source Voltage Gate
* Source Voltage Drain Current
* Continuous (Note 1a)
* Pulsed 30 V ±12 V A 5.0 20 PD Powe

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FDMA430NZ N-Channel MOSFET ON Semiconductor

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