FDMC86520L
Overview
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
- Max rDS(on) = 7.9 mW at VGS = 10 V, ID = 13.5 A
- Max rDS(on) = 11.7 mW at VGS = 4.5 V, ID = 11.5 A
- Low Profile - 1 mm Max in Power 33
- 100% UIL Tested
- This Device is Pb-Free, Halide Free and RoHS Compliant
