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FDMC86520L - N-Channel MOSFET

General Description

This N

improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.

Key Features

  • Max rDS(on) = 7.9 mW at VGS = 10 V, ID = 13.5 A.
  • Max rDS(on) = 11.7 mW at VGS = 4.5 V, ID = 11.5 A.
  • Low Profile.
  • 1 mm Max in Power 33.
  • 100% UIL Tested.
  • This Device is Pb.
  • Free, Halide Free and RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 60 V, 22 A, 7.9 mW FDMC86520L General Description This N−Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Features • Max rDS(on) = 7.9 mW at VGS = 10 V, ID = 13.5 A • Max rDS(on) = 11.7 mW at VGS = 4.5 V, ID = 11.