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FDMC86520L N-Channel MOSFET

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Description

MOSFET * N-Channel, POWERTRENCH) 60 V, 22 A, 7.9 mW FDMC86520L General .
This N. Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters.

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Features

* Max rDS(on) = 7.9 mW at VGS = 10 V, ID = 13.5 A
* Max rDS(on) = 11.7 mW at VGS = 4.5 V, ID = 11.5 A
* Low Profile
* 1 mm Max in Power 33
* 100% UIL Tested
* This Device is Pb

Applications

* Primary Switch in Isolated DC
* DC
* Synchronous Rectifier
* Load Switch MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Rating Unit VDS Drain to Source Voltage 60 V VGS Gate to Source Voltage ±20 V ID Drain Current Continuous T

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