FDMT800120DC N-Channel MOSFET

ON Semiconductor

Description

DATA SHEET www.onsemi.com MOSFET * N-Channel, DUAL COOL ), POWERTRENCH) 120 V, 128 A, 4.2 mW FDMT800120DC General .
This N. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process.

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Datasheet Specifications

Part number: FDMT800120DC
Manufacturer: ON Semiconductor ↗
File Size: 646.86 KB
Datasheet: FDMT800120DC-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max rDS(on) = 4.2 mW at VGS = 10 V, ID = 20 A
* Max rDS(on) = 6.4 mW at VGS = 6 V, ID = 16 A
* Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency
* Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery
* Low P

Applications

* OringFET / Load Switching
* Synchronous Rectification
* DC
* DC Conversion VDS 120 V RDS(on) MAX 4.2 mW @ 10 V 6.4 mW @ 6 V ID MAX 128 A Top Bottom TDFNW8 8.3 x 8.4, 2P, DUAL COOL, OPTION 2 CASE 507AR MARKING DIAGRAM 800120 A WL Y W = Device Code = Assembly L

FDMT800120DC Distributors

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FDMT800120DC N-Channel MOSFET ON Semiconductor

ON Semiconductor FDMT800120DC-like datasheet