FDMT800120DC Datasheet - ON Semiconductor

N-Channel MOSFET

FDMT800120DC Features

* Max rDS(on) = 4.2 mW at VGS = 10 V, ID = 20 A

* Max rDS(on) = 6.4 mW at VGS = 6 V, ID = 16 A

* Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency

* Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery

* Low P

FDMT800120DC General Description

This N *Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction *to *Ambient.

FDMT800120DC Datasheet (646.86 KB)