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FGH25N120FTDS IGBT

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Description

IGBT - Field Stop, Trench 1200 V, 25 A FGH25N120FTDS .
Using advanced field stop trench technology, ON Semiconductor’s 1200 V trench IGBTs offer the optimum performance for hard switching application such.

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Features

* High Speed Switching
* Low Saturation Voltage: VCE(sat) =1.60 V @ IC = 25 A
* High Input Impedance
* These Device is Pb

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