FGH12040WD

IGBT

ON Semiconductor

* Maximum Junction Temperature: TJ =175°C

* Positive Temperature Co

* efficient for Easy Parallel Operating

* Low Saturation Voltage: VCE(sat) = 2.3 V (Typ.) @ IC = 40 A

* 100% of the Parts Tested for ILM (Note 1)

* Short Circuit Ruggedness > 5 us @ 150°

FGH12040WD

807.27 KB

Igbt.

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FGH12040WD IGBT ON Semiconductor

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