FGH30N60LSD
386.47kb
Pt igbt. Using ON Semiconductor ’s advanced PT technology, the FGA30N60LSD IGBT offers superior conduction performances, which offer the optim
TAGS
📁 Related Datasheet
FGH30N60LSD - IGBT
(Fairchild Semiconductor)
FGH30N60LSD — 600 V, 30 A PT IGBT
FGH30N60LSD
600 V, 30 A PT IGBT
Features
• Low Saturation Voltage: VCE(sat) = 1.1 V @ IC = 30 A • High Input Impeda.
FGH30N6S2 - 600V/ SMPS II Series N-Channel IGBT
(Fairchild Semiconductor)
FGH30N6S2 / FGP30N6S2 / FGB30N6S2
August 2003
FGH30N6S2 / FGP30N6S2 / FGB30N6S2
600V, SMPS II Series N-Channel IGBT
General Description
The FGH30N6S.
FGH30N6S2D - 600V/ SMPS II Series N-Channel IGBT
(Fairchild Semiconductor)
FGH30N6S2D / FGP30N6S2D / FGB30N6S2D
July 2001
FGH30N6S2D / FGP30N6S2D / FGB30N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM.
FGH30N120FTD - Trench IGBT
(Fairchild Semiconductor)
FGH30N120FTD 1200V, 30A Trench IGBT
FGH30N120FTD
1200V, 30A Trench IGBT
Features
• Field stop trench technology • High speed switching • Low saturati.
FGH30S130P - IGBT
(Fairchild Semiconductor)
FGH30S130P — 1300 V, 30 A Shorted-anode IGBT
November 2014
FGH30S130P
1300 V, 30 A Shorted-anode IGBT
Features
• High Speed Switching • Low Saturat.
FGH30S130P - IGBT
(ON Semiconductor)
IGBT - Shorted-Anode
1300 V, 30 A
FGH30S130P
Description Using advanced field stop trench and shorted−anode technology,
ON Semiconductor’s shorted−ano.
FGH30S150P - IGBT
(ON Semiconductor)
IGBT - Shorted-anode
1500 V, 30 A
FGH30S150P
Description Using advanced field stop trench and shorted−anode technology,
ON Semiconductor’s shorted−ano.
FGH30S150P - IGBT
(Fairchild Semiconductor)
FGH30S150P — 1500 V, 30 A Shorted-anode IGBT
March 2016
FGH30S150P
1500 V, 30 A Shorted-anode IGBT
Features
• High Speed Switching • Low Saturation.
FGH30T65UPDT - IGBT
(Fairchild Semiconductor)
FGH30T65UPDT — 650 V, 30 A Field Stop Trench IGBT
November 2013
FGH30T65UPDT
650V, 30A Field Stop Trench IGBT
Features
• Maximum Junction Temperatu.
FGH12040WD - IGBT
(ON Semiconductor)
IGBT - Field Stop, Trench
1200 V, 40 A
FGH12040WD
Description Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 2nd .