FGH30S150P

IGBT

ON Semiconductor

FGH30S150P Features

* High Speed Switching

* Low Saturation Voltage: VCE(sat) =1.85 V @ IC = 30 A

* High Input Impedance

* This Device is Pb

* Free and is RoHS Compliant Applications

* Induction Heating, Microwave Oven www.onsemi.com C G E E C G COLLECTOR (FLANGE) TO

FGH30S150P General Description

Using advanced field stop trench and shorted

*anode technology, ON Semiconductor’s shorted

*anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. T.

FGH30S150P Datasheet (421.18 KB)