FGH50N6S2D

N-Channel IGBT

ON Semiconductor

FGH50N6S2D Features

* 100 kHz Operation at 390 V, 40 A

* 200 kHz Operation at 390 V, 25 A

* 600 V Switching SOA Capability

* Typical Fall Time

* Low Gate Charge 90 ns at TJ = 125°C 70 nC at VGE = 15 V

* Low Plateau Voltage 6.5 V Typical

* UIS Rated 480 mJ

FGH50N6S2D General Description

The FGH50N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These de.

FGH50N6S2D Datasheet (394.43 KB)