FGH50N6S2D - N-Channel IGBT

ON Semiconductor

FGH50N6S2D Datasheet Preview — Preview of FGH50N6S2D PDF

Datasheet Details

Part number	FGH50N6S2D
Manufacturer	ON Semiconductor ↗
File Size	394.43 KB
Description	N-Channel IGBT
Datasheet	FGH50N6S2D-ONSemiconductor.pdf

FGH50N6S2D Product details

Description

The FGH50N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS).These LGC devices shorten delay times, and reduce the power requirement of the gate drive.These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential.SMPS II LGC devices have been specia

Features

100 kHz Operation at 390 V, 40 A.
200 kHz Operation at 390 V, 25 A.
600 V Switching SOA Capability.
Typical Fall Time.
Low Gate Charge 90 ns at TJ = 125°C 70 nC at VGE = 15 V.
Low Plateau Voltage 6.5 V Typical.
UIS Rated 480 mJ.
Low Conduction Loss.
This is a Pb.
Free Device www. onsemi. com C G E E C G TO.
247.
3LD CASE 340CK.

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Published: Oct 3, 2022 |