FGH50N6S2D N-Channel IGBT

ON Semiconductor

Description

IGBT - SMPS II Series N-Channel with Anti-Parallel Stealth Diode 600 V FGH50N6S2D .
The FGH50N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charg.

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Datasheet Specifications

Part number: FGH50N6S2D
Manufacturer: ON Semiconductor ↗
File Size: 394.43 KB
Datasheet: FGH50N6S2D-ONSemiconductor.pdf
Description: N-Channel IGBT

Features

* 100 kHz Operation at 390 V, 40 A
* 200 kHz Operation at 390 V, 25 A
* 600 V Switching SOA Capability
* Typical Fall Time
* Low Gate Charge 90 ns at TJ = 125°C 70 nC at VGE = 15 V
* Low Plateau Voltage 6.5 V Typical
* UIS Rated 480 mJ

Applications

* where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for:
* Power Factor Correction (PFC) Circuits
* Full Bridge Topologies
* Half Bridge Topologies
* Push
* Pull Circuits
* U

FGH50N6S2D Distributors

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FGH50N6S2D N-Channel IGBT ON Semiconductor

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