FGH50T65UPD - Field Stop Trench IGBT
(Fairchild Semiconductor)
FGH50T65UPD 650 V 50 A Field Stop Trench IGBT
April 2013
FGH50T65UPD
650 V, 50 A Field Stop Trench IGBT
Features
• Maximum Junction Temperature : TJ.
FGH50T65SQD - IGBT
(ON Semiconductor)
IGBT - Field Stop, Trench
650 V, 50 A
FGH50T65SQD
Description Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 4th .
FGH50T65SQD - Field Stop Trench IGBT
(Fairchild Semiconductor)
FGH50T65SQD 650 V, 50 A Field Stop Trench IGBT
FGH50T65SQD
650 V, 50 A Field Stop Trench IGBT
April 2016
Features
• Maximum Junction Temperature : .
FGH50N3 - N-Channel IGBT
(Fairchild Semiconductor)
FGH50N3
July 2002
FGH50N3
300V, PT N-Channel IGBT
General Description
The FGH50N3 is a MOS gated high voltage switching device bining the best fe.
FGH50N3 - SMPS IGBT
(ON Semiconductor)
IGBT - SMPS 300 V
FGH50N3
Description Using ON Semiconductor’s planar technology, this IGBT is ideal
for many high voltage switching applications oper.
FGH50N6S2 - 600V/ SMPS II Series N-Channel IGBT
(Fairchild Semiconductor)
FGH50N6S2
August 2003
FGH50N6S2
600V, SMPS II Series N-Channel IGBT
General Description
The FGH50N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS.
FGH50N6S2D - N-Channel IGBT
(ON Semiconductor)
IGBT - SMPS II Series N-Channel with Anti-Parallel Stealth Diode 600 V
FGH50N6S2D
Description The FGH50N6S2D is a Low Gate Charge, Low Plateau Volta.
FGH50N6S2D - 600V/ SMPS II Series N-Channel IGBT
(Fairchild Semiconductor)
FGH50N6S2D
July 2002
FGH50N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
General Description
The FGH50N6S2D is a Low G.
FGH12040WD - IGBT
(ON Semiconductor)
IGBT - Field Stop, Trench
1200 V, 40 A
FGH12040WD
Description Using novel field stop IGBT technology, ON Semiconductor’s new
series of field stop 2nd .
FGH15T120SMD - IGBT
(ON Semiconductor)
IGBT - Field Stop, Trench
1200 V, 15 A
FGH15T120SMD
Description Using innovative field stop trench IGBT technology,
ON Semiconductor’s new series of f.
