FQN1N60C N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel QFET) 600 V, 0.3 A, 11.5 W FQN1N60C .
This N. Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

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Datasheet Specifications

Part number: FQN1N60C
Manufacturer: ON Semiconductor ↗
File Size: 417.76 KB
Datasheet: FQN1N60C-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 0.3 A, 600 V, RDS(on) = 11.5 W (Max. ) @ VGS = 10 V, ID = 0.15 A
* Low Gate Charge (Typ. 4.8 nC)
* Low Crss (Typ. 3.5 pF)
* 100% Avalanche Tested ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Value Unit VDSS VGSS ID Drain to Sour

FQN1N60C Distributors

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FQN1N60C N-Channel MOSFET ON Semiconductor

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