FQN1N60C

N-Channel MOSFET

ON Semiconductor

FQN1N60C Features

* 0.3 A, 600 V, RDS(on) = 11.5 W (Max.) @ VGS = 10 V, ID = 0.15 A

* Low Gate Charge (Typ. 4.8 nC)

* Low Crss (Typ. 3.5 pF)

* 100% Avalanche Tested ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Value Unit VDSS VGSS ID Drain to Sour

FQN1N60C General Description

This N

*Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on

*state resistance, and to provide superior switching performance and high avalanch.

FQN1N60C Datasheet (417.76 KB)