FQN1N60C - N-Channel MOSFET

ON Semiconductor

FQN1N60C Datasheet Preview — Preview of FQN1N60C PDF

Datasheet Details

Part number	FQN1N60C
Manufacturer	ON Semiconductor ↗
File Size	417.76 KB
Description	N-Channel MOSFET
Datasheet	FQN1N60C-ONSemiconductor.pdf

FQN1N60C Product details

Description

This N Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.This advanced MOSFET technology has been especially tailored to reduce on state resistance, and to provide superior switching performance and high avalanche energy strength.

Features

0.3 A, 600 V, RDS(on) = 11.5 W (Max. ) @ VGS = 10 V, ID = 0.15 A.
Low Gate Charge (Typ. 4.8 nC).
Low Crss (Typ. 3.5 pF).
100% Avalanche Tested.

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Published: Jun 28, 2022 |