FQNL1N50B Datasheet - Fairchild Semiconductor

FQNL1N50B 500V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQNL1N50B Features

* 0.27A, 500V, RDS(on) = 9.0Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 3.0 pF) Fast switching Improved dv/dt capability D ! " G! ! " " " TO-92L FQNL Series ! GDS S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS IAR EAR

FQNL1N50B Datasheet (620.16 KB)