Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.
Features
- 0.38 A, 500 V, RDS(on) = 6 Ω (Max) @VGS = 10 V, ID = 0.19 A.
- Low Gate Charge (Typ. 4.9 nC).
- Low Crss (Typ. 4.1 pF).
- 100% Avalanche Tested
D
G D S
TO-92
FQN Series
Absolute Maximum Ratings
Symbol
VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Curren.
FQN1N50C Datasheet
