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FQN1N50C - N-Channel QFET MOSFET

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

Key Features

  • 0.38 A, 500 V, RDS(on) = 6 Ω (Max) @VGS = 10 V, ID = 0.19 A.
  • Low Gate Charge (Typ. 4.9 nC).
  • Low Crss (Typ. 4.1 pF).
  • 100% Avalanche Tested D G D S TO-92 FQN Series Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Curren.

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Full PDF Text Transcription (Reference)

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FQN1N50C N-Channel MOSFET FQN1N50C N-Channel QFET MOSFET 500 V, 0.38 A, 6 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. March 2013 Features • 0.38 A, 500 V, RDS(on) = 6 Ω (Max) @VGS = 10 V, ID = 0.19 A • Low Gate Charge (Typ. 4.9 nC) • Low Crss (Typ. 4.