Datasheet4U Logo Datasheet4U.com

FQN1N50C - N-Channel QFET MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

Features

  • 0.38 A, 500 V, RDS(on) = 6 Ω (Max) @VGS = 10 V, ID = 0.19 A.
  • Low Gate Charge (Typ. 4.9 nC).
  • Low Crss (Typ. 4.1 pF).
  • 100% Avalanche Tested D G D S TO-92 FQN Series Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Curren.

📥 Download Datasheet

Datasheet preview – FQN1N50C

Datasheet Details

Part number FQN1N50C
Manufacturer Fairchild Semiconductor
File Size 1.74 MB
Description N-Channel QFET MOSFET
Datasheet download datasheet FQN1N50C Datasheet
Additional preview pages of the FQN1N50C datasheet.

📁 Similar Datasheet

  • FQN1N60C - N-Channel MOSFET (ON Semiconductor)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FQN1N50C N-Channel MOSFET FQN1N50C N-Channel QFET MOSFET 500 V, 0.38 A, 6 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. March 2013 Features • 0.38 A, 500 V, RDS(on) = 6 Ω (Max) @VGS = 10 V, ID = 0.19 A • Low Gate Charge (Typ. 4.9 nC) • Low Crss (Typ. 4.
Published: |