FQNL2N50B Datasheet | Fairchild Semiconductor

FQNL2N50B March 2001 QFET FQNL2N50B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. TM Features - - - - - 0.35A, 500V, RDS(on) = 5.3Ω @VGS = 10 V Low gate charge ( typical 6.0 nC) Low Crss ( typical 4.0 pF) Fast switching Improved dv/dt capability D ! " G! ! " " " TO-92L FQNL...