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FQN1N50C Datasheet - Fairchild Semiconductor

FQN1N50C, N-Channel QFET MOSFET

FQN1N50C N-Channel MOSFET FQN1N50C N-Channel QFET MOSFET 500 V, 0.38 A, 6 Ω .
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.
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Datasheet Details

Part number:

FQN1N50C

Manufacturer:

Fairchild Semiconductor

File Size:

1.74 MB

Description:

N-Channel QFET MOSFET

Features

* 0.38 A, 500 V, RDS(on) = 6 Ω (Max) @VGS = 10 V, ID = 0.19 A
* Low Gate Charge (Typ. 4.9 nC)
* Low Crss (Typ. 4.1 pF)
* 100% Avalanche Tested D G D S TO-92 FQN Series Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter D

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