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KSP13

NPN Epitaxial Silicon Darlington Transistor

KSP13 Features

* Collector

* Emitter Voltage: VCES=30 V

* Collector Power Dissipation: PC (max)=625 mW

* These are Pb

* Free Devices ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VCBO VCES Collector

* Base Voltage Collector

KSP13 General Description

TO

*92 3 4.825X4.76 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi.

KSP13 Datasheet (192.44 KB)

Preview of KSP13 PDF

Datasheet Details

Part number:

KSP13

Manufacturer:

ON Semiconductor ↗

File Size:

192.44 KB

Description:

Npn epitaxial silicon darlington transistor.

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TAGS

KSP13 NPN Epitaxial Silicon Darlington Transistor ON Semiconductor

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