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KSP13 NPN Epitaxial Silicon Darlington Transistor

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Description

DATA SHEET www.onsemi.com NPN Epitaxial Silicon Darlington Transistor KSP13 .
TO. 92 3 4.

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Features

* Collector
* Emitter Voltage: VCES=30 V
* Collector Power Dissipation: PC (max)=625 mW
* These are Pb
* Free Devices ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit VCBO VCES Collector
* Base Voltage Collector

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