M75N06HD Datasheet - ON Semiconductor

M75N06HD Power MOSFET

MTP75N06HD Preferred Device Power MOSFET 75 A, 60 V, N Channel, TO 220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain to source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, and inductive loads. The avalanche energy capability is specified to eliminate th.

M75N06HD Features

* 0 V TJ = 25°C C, CAPACITANCE (pF) 4000 3000 Crss Ciss 2000 1000 0 10 5 05 VGS VDS Coss Crss 10 15 20 25 GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation http://onsemi.com 4 MTP75N06HD VGS, GATE

* TO

* SOURCE V

M75N06HD-ONSemiconductor.pdf