* epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage, high- frequency inverters, free wheeling diodes, and polarity protection diodes.
* Low Reverse Current
* Low Stored Charge, Majority Carrier Conduction
MBR3100RL Datasheet (53.69 KB)
MBR3100RL
53.69 KB
Schottky barrier rectifier.
MBR3100
Preferred Device
Axial Lead Rectifier
. . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-t.
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