* Features:
* Dual Diode Construction
* May be Paralleled for Higher Current Output
* Guardring for Stress Protection
* Low Forward Voltage Drop
* 125°C Operating Junction Temperature
* Maximum Die Size
* Short Heat Sink Tab Manufactured
MBRB3030CTL Datasheet (108.75 KB)
MBRB3030CTL
108.75 KB
Power rectifier.
MBRB3030CTL
Advance Information SWITCHMODE™ Power Rectifier
. . . using the Schottky Barrier principle with a proprietary barrier metal. These state<.
📁 Related Datasheet
MBRB3030CT Power Rectifier (ON Semiconductor)
MBRB3030CT SWITCHMODE Power Rectifier (Motorola)
MBRB3030CT 30 Amp Schottky Barrier Rectifier (MCC)
MBRB3030CT Schottky Barrier Rectifier (Inchange Semiconductor)
MBRB3030CTL SCHOTTKY RECTIFIER (International Rectifier)
MBRB3030CTL Power Rectifier (Motorola)
MBRB3030CTLG Power Rectifier (ON Semiconductor)
MBRB3030 SWITCHMODE Power Rectifier (Motorola)
MBRB3035CT Dual Common Cathode Schottky Rectifier (Vishay Siliconix)
MBRB3035CT Dual Schottky Barrier Rectifiers (New Jersey Semi-Conductor)
