MBRB30H60CT-1G Features
* Low Forward Voltage
* Low Power Loss/High Efficiency
* High Surge Capacity
* 175°C Operating Junction Temperature
* 30 A Total (15 A Per Diode Leg)
* Guard
* Ring for Stress Protection
* AEC
* Q101 Qualified and PPAP Capable
MBR30H60CTG_ONSemiconductor.pdf
Datasheet Details
MBRB30H60CT-1G, MBR30H60CTG
227.88 KB
Switchmode power rectifier.
This datasheet PDF includes multiple part numbers: MBRB30H60CT-1G, MBR30H60CTG.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
MBRB30H60CT Dual Common Cathode Schottky Rectifier (Vishay)
MBRB30H60CTT4G SWITCHMODE Power Rectifier (ON Semiconductor)
MBRB30H100CT Dual Common-Cathode High-Voltage Schottky Rectifier (Vishay)
MBRB30H30CT-1 SWITCHMODE Power Rectifier (ON Semiconductor)
MBRB30H30CT-1G Power Rectifiers (ON Semiconductor)
MBRB30H35CT Dual Common Cathode Schottky Rectifier (Vishay Siliconix)
MBRB30H45CT Dual Common Cathode Schottky Rectifier (Vishay)
MBRB30H50CT Dual Common Cathode Schottky Rectifier (Vishay)
MBRB30H60CT-1G Distributor
