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MBRS2040LT3G - Schottky Power Rectifier

Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features.
  • Compact Package with J.
  • Bend Leads Ideal for Automated Handling.
  • Highly Stable Oxide Passivated Junction.
  • Guardring for Over.
  • Voltage Protection.
  • Low Forward Voltage Drop.
  • ESD Ratings:  Human Body Model = 3B (> 16000 V)  Machine Model = C (> 400 V).

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Datasheet preview – MBRS2040LT3G

Datasheet Details

Part number MBRS2040LT3G
Manufacturer ON Semiconductor
File Size 221.33 KB
Description Schottky Power Rectifier
Datasheet download datasheet MBRS2040LT3G Datasheet
Additional preview pages of the MBRS2040LT3G datasheet.

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Full PDF Text Transcription

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DATA SHEET www.onsemi.com Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package MBRS2040LT3G, NRVBS2040LT3G, NRVBS2040LN . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.
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