MJ11017
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Darlington power transistors.
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MJ11011 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlington Power Transistor
MJ11011
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -60V(Min.) ·High DC Current Gain-
:.
MJ11012 - 30 AMPERE DARLINGTON POWER TRANSISTORS
(Motorola Inc)
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Order this document by MJ11012/D
High-Current Complementary Silicon Transistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ.
MJ11012 - High-Current Complementary Silicon NPN Transistors
(ON Semiconductor)
MJ11015 (PNP); MJ11012, MJ11016 (NPN)
MJ11016 is a Preferred Device
High-Current Complementary Silicon Transistors
. . . for use as output devices in .
MJ11012 - NPN Transistor
(DIGITRON)
MJ11012, MJ11014, MJ11016
High-reliability discrete products and engineering services since 1977
NPN SILICON POWER DARLINGTON TRANSISTORS
FEATURES .
MJ11012 - NPN Transistor
(INCHANGE)
isc Silicon NPN Darlington Power Transistor
MJ11012
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= 60V(Min.) ·High DC Current Gain-
: .
MJ11013 - DARLINGTON POWER TRANSISTORS
(ON Semiconductor)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ11012/D
High-Current Complementary Silicon Transistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ.
MJ11013 - 30 AMPERE DARLINGTON POWER TRANSISTORS
(Motorola Inc)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ11012/D
High-Current Complementary Silicon Transistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ.
MJ11013 - POWER TRANSISTOR
(Inchange Semiconductor)
isc Silicon PNP Darlington Power Transistor
MJ11013
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -90V(Min.) ·High DC Current Gain-
.
MJ11014 - 30 AMPERE DARLINGTON POWER TRANSISTORS
(Motorola Inc)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ11012/D
High-Current Complementary Silicon Transistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ.
MJ11014 - DARLINGTON POWER TRANSISTORS
(ON Semiconductor)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ11012/D
High-Current Complementary Silicon Transistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ.
