* TAGE (VOLTS) Figure 7. Capacitance Variation 30 http://onsemi.com 4 MMDF4P03HD VGS, GATE
* TO
* SOURCE VOLTAGE (VOLTS) t, TIME (ns) VDS, DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) 7.0 QT 6.0 5.0 4.0 Q1 Q2 30 VGS 20 1000 VDD = 15 V ID = 3 A 100 VGS = 10 V TJ = 25°C td
MMDF4P03HD Datasheet (198.85 KB)
MMDF4P03HD
198.85 KB
Power mosfet.
MMDF4P03HD
Preferred Device
Power MOSFET
4 A, 30 V, P
*Channel SO
*8, Dual
Dual MOSFET devices are designed for use in low voltage, high.
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