* r>
* Source Voltage versus Total Charge 1000 VDD = 10 V ID = 5 A VGS = 4 V TJ = 25°C tf tr td(off) 100 td(on) 10 1 10 100 RG, GATE RESISTANCE (OHMS) Figure 9. Resistive Switching Time Variation versus Gate Resistance DRAIN
* TO
* SOURCE DIODE CHARACTERISTICS The switching charact
MMSF10N02Z Datasheet (224.37 KB)
MMSF10N02Z
224.37 KB
Power mosfet.
MMSF10N02Z
Preferred Device
Power MOSFET 10 Amps, 20 Volts
N
*Channel SO
*8
EZFETst are an advanced series of Power MOSFETs which contai.
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