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MMSF10N02Z Power MOSFET

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Description

MMSF10N02Z Preferred Device Power MOSFET 10 Amps, 20 Volts N *Channel SO *8 EZFETst are an advanced series of Power MOSFETs which contai.

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Features

* r>
* Source Voltage versus Total Charge 1000 VDD = 10 V ID = 5 A VGS = 4 V TJ = 25°C tf tr td(off) 100 td(on) 10 1 10 100 RG, GATE RESISTANCE (OHMS) Figure 9. Resistive Switching Time Variation versus Gate Resistance DRAIN
* TO
* SOURCE DIODE CHARACTERISTICS The switching charact

Applications

* where power efficiency is important.
* Zener Protected Gates Provide Electrostatic Discharge Protection
* Low RDS(on) Provides Higher Efficiency and Extends Battery Life
* Logic Level Gate Drive
* Can Be Driven by Logic ICs
* Miniature SO
* 8 Surface Mou

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