MSD1819A-RT1 Datasheet - ON Semiconductor

MSD1819A-RT1 General Purpose Amplifier Transistor

MSD1819A-RT1 Features

* High hFE, 210

* 460

* Low VCE(sat), < 0.5 V

* Moisture Sensitivity Level 1

* ESD Protection: Human Body Model > 4000 V Machine Model > 400 V

* These Devices are Pb

* Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25C) Rating Symbol Va

Datasheet Details

MSD1819A-RT1

205.09 KB

General purpose amplifier transistor.

MSD1819A-RT1 Distributor

📁 Related Datasheet

MSD1819A-RT1 General Purpose Amplifier Transistor (Motorola)

MSD1819A-ST1 General Purpose Amplifier Transistor (Motorola)

MSD100 Glass Passivated Three Phase Rectifier Bridge (Microsemi)

MSD100DA-X Ultra High Brightness Red Led Lamp (Micro Electronics)

MSD1010T1 Low Saturation Volgate PNP Silicon Driver Transistors (ON Semiconductor)

MSD1010T1 Low Saturation Voltage (Leshan Radio Company)

MSD1010T1 PNP Silicon Driver Transistors (Motorola)

MSD1010T1 Low Saturation Voltage (E-Tech)

TAGS