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MSD2714AT1
Preferred Device
VHF/UHF Transistor
NPN Silicon
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol VCEO VCBO VEBO Max 25 30 3.0 Unit Vdc Vdc Vdc
http://onsemi.com
COLLECTOR 3 2 BASE 1 EMITTER
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR−5 Board TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Symbol PD (Note 1) RqJA PD (Note 2) RqJA TJ, Tstg Max 225 1.8 556 Unit mW mW/°C °C/W 2 1 3
SC−59 CASE 318D STYLE 1
300 mW 2.4 mW/°C www.DataSheet4U.