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MSQA6V1W5T2G Datasheet - ON Semiconductor

ESD Protection Diode Array

MSQA6V1W5T2G Features

* Low Clamping Voltage

* Stand Off Voltage 3 V

* Low Leakage < 1 mA @ 3 V

* SC

* 88A Package Allows Four Separate Unidirectional Configurations

* IEC1000

* 4

* 2 Level 4 ESD Protection

* SZ Prefix for Automotive and Other Applications

MSQA6V1W5T2G General Description

of survivability specs. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current .

MSQA6V1W5T2G Datasheet (252.79 KB)

Preview of MSQA6V1W5T2G PDF

Datasheet Details

Part number:

MSQA6V1W5T2G

Manufacturer:

ON Semiconductor ↗

File Size:

252.79 KB

Description:

Esd protection diode array.
MSQA6V1W5T2G, SZMSQA6V1W5T2G ESD Protection Diode Array Low Clamping Voltage This quad monolithic silicon voltage suppressor is designed for applicat.

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MSQA6V1W5T2G ESD Protection Diode Array ON Semiconductor

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