MSQA6V1W5T2G Datasheet - ON Semiconductor

MSQA6V1W5T2G ESD Protection Diode Array

of survivability specs. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current .

MSQA6V1W5T2G, SZMSQA6V1W5T2G ESD Protection Diode Array Low Clamping Voltage This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its quad junction common anode design protects four separate lines using only one package. These devices are ideal.

MSQA6V1W5T2G Features

* Low Clamping Voltage

* Stand Off Voltage 3 V

* Low Leakage < 1 mA @ 3 V

* SC

* 88A Package Allows Four Separate Unidirectional Configurations

* IEC1000

* 4

* 2 Level 4 ESD Protection

* SZ Prefix for Automotive and Other Applications

MSQA6V1W5T2G-ONSemiconductor.pdf