* rdless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resi
MTSF3N03HD Datasheet (138.07 KB)
MTSF3N03HD
138.07 KB
Power mosfet.
MTSF3N03HD Preferred Device Power MOSFET 3 Amps, 30 Volts N Channel Micro8t These Power MOSFET devices are capable of withstanding high energy.
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