MTSF3N03HD Datasheet (ON Semiconductor)

MTSF3N03HD, Power MOSFET

MTSF3N03HD Preferred Device Power MOSFET 3 Amps, 30 Volts N Channel Micro8t These Power MOSFET devices are capable of withstanding high energy in the avalanche and commutation modes and the drain to source diode has a very low reverse recovery time.

Micro8 devices are designed for use in low voltage, high speed switching applications where power efficiency is important.

Typical applications are dc dc converters, and power management in portable and battery powered

MTSF3N03HD Features

* rdless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resi