MTSF1P02HD Datasheet (Motorola) - SINGLE TMOS POWER MOSFET

MTSF1P02HD, SINGLE TMOS POWER MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTSF1P02HD/D Advance Information Medium Power Surface Mount Products Micro8™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process to achieve lowest possible on resistance per silicon area.

They are capable of withstanding high energy in the avalanche and commutation modes and the drain to source diode has a very low reverse recovery time.

Micro8™ devices

MTSF1P02HD Features

* licates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (F