MTSF3N03HD Datasheet (Motorola) - SINGLE TMOS POWER MOSFET

MTSF3N03HD, SINGLE TMOS POWER MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTSF3N03HD/D Designer's ™ Data Sheet Medium Power Surface Mount Products MTSF3N03HD Motorola Preferred Device Micro8™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process to achieve lowest possible on resistance per silicon area.

They are capable of withstanding high energy in the avalanche and commutation modes and the drain to source diode has a very

MTSF3N03HD Features

* circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring which is common to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. The voltage is determined by Ldi/dt, but