MTSF3N02HD Datasheet (Motorola) - SINGLE TMOS POWER MOSFET

MTSF3N02HD, SINGLE TMOS POWER MOSFET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTSF3N02HD/D Designer's ™ Data Sheet Medium Power Surface Mount Products MTSF3N02HD Motorola Preferred Device Micro8™ devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process to achieve lowest possible on resistance per silicon area.

They are capable of withstanding high energy in the avalanche and commutation modes and the drain to source diode has a very

MTSF3N02HD Features

* mmon to both the drain and gate current paths, produces a voltage at the source which reduces the gate drive current. The voltage is determined by Ldi/dt, but since di/dt is a function of drain current, the mathematical solution is complex. The MOSFET output capacitance also complicates the mathemat