MTV32N25E Datasheet - ON Semiconductor

MTV32N25E Power Field Effect Transistor

MTV32N25E Designer’s™ Data Sheet TMOS E FET.™ Power Field Effect Transistor D3PAK for Surface Mount N Channel Enhancement Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enh.

MTV32N25E Features

* power electronic loads are During the turn

* on and turn

* off delay times, gate current is inductive; the data in the figure is taken with a resistive load, not constant. The simplest calculation uses appropriate which approximates an optimally snubbed inductive load. values from t

MTV32N25E Datasheet (274.65 KB)