MTV32N20E Datasheet (Motorola) - TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM

MTV32N20E, TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV32N20E/D Advance Information TMOS E-FET.™ Power Field Effect Transistor D3PAK for Surface Mount This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time.

In addition, this advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes.

The new energy efficient design also offers a drain

MTV32N20E Features

* es switching losses. VDS = 0 V VGS = 0 V TJ = 25°C 8000 C, CAPACITANCE (pF) Crss 6000 4000 Ciss 2000 Coss 0 10 5 VGS 0 VDS 5 10 15 20 25 GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transisto