* es switching losses. VDS = 0 V VGS = 0 V TJ = 25°C 8000 C, CAPACITANCE (pF) Crss 6000 4000 Ciss 2000 Coss 0 10 5 VGS 0 VDS 5 10 15 20 25 GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transisto
MTV32N20E Datasheet (264.86 KB)
MTV32N20E
Motorola
264.86 KB
Tmos power fet 32 amperes 200 volts rds(on) = 0.075 ohm.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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TMOS E-FET.™ Power Field Effect Transistor D3PAK for .
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