MTV32N20E Datasheet - Motorola

MTV32N20E TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV32N20E/D Advance Information TMOS E-FET.™ Power Field Effect Transistor D3PAK for Surface Mount This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition, this advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain .

MTV32N20E Features

* es switching losses. VDS = 0 V VGS = 0 V TJ = 25°C 8000 C, CAPACITANCE (pF) Crss 6000 4000 Ciss 2000 Coss 0 10 5 VGS 0 VDS 5 10 15 20 25 GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transisto

MTV32N20E Datasheet (264.86 KB)

MTV32N20E Datasheet Preview — Preview of MTV32N20E PDF

Datasheet Details

Part number:

MTV32N20E

Manufacturer:

Motorola

File Size:

264.86 KB

Description:

Tmos power fet 32 amperes 200 volts rds(on) = 0.075 ohm.

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MTV32N20E TMOS POWER FET AMPERES 200 VOLTS RDSon 0.075 OHM Motorola

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