MTV16N50E Datasheet - Motorola

MTV16N50E TMOS POWER FET 16 AMPERES 500 VOLTS

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV16N50E/D Advance Information TMOS E-FET .™ Power Field Effect Transistor D 3 PAK for Surface Mount N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition, this advanced TMOS E FET is designed to withstand high energy in the avalanch.

MTV16N50E Features

* obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed

MTV16N50E Datasheet (331.02 KB)