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MTV16N50E

TMOS POWER FET 16 AMPERES 500 VOLTS

MTV16N50E Features

* obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed

MTV16N50E Datasheet (331.02 KB)

Preview of MTV16N50E PDF

Datasheet Details

Part number:

MTV16N50E

Manufacturer:

Motorola

File Size:

331.02 KB

Description:

Tmos power fet 16 amperes 500 volts.
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV16N50E/D Advance Information TMOS E-FET .™ Power Field Effect.

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MTV16N50E TMOS POWER FET AMPERES 500 VOLTS Motorola

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