MTV16N50E Datasheet - Motorola

MTV16N50E, TMOS POWER FET 16 AMPERES 500 VOLTS

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV16N50E/D Advance Information TMOS E-FET .™ Power Field Effect.

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Datasheet Details

Part number:

MTV16N50E

Manufacturer:

Motorola

File Size:

331.02 KB

Description:

TMOS POWER FET 16 AMPERES 500 VOLTS

Features

* obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed

Applications

* in power supplies, converters, PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Termination

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MTV16N50E TMOS POWER FET AMPERES 500 VOLTS Motorola

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