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MTV10N100E TMOS POWER FET 10 AMPERES 1000 VOLTS

MTV10N100E Description

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV10N100E/D Designer's TMOS E-FET .™ Power Field Effect Transis.

MTV10N100E Features

* OSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching pe

MTV10N100E Applications

* that require surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage
* blocking capability without degrading performance over time. In addition, this advanced TMOS E
* FET is desig

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Datasheet Details

Part number
MTV10N100E
Manufacturer
Motorola
File Size
323.36 KB
Datasheet
MTV10N100E_Motorola.pdf
Description
TMOS POWER FET 10 AMPERES 1000 VOLTS

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TMOS POWER FET AMPERES 1000 VOLTS Motorola
Motorola MTV10N100E-like datasheet