* OSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching pe
MTV10N100E Datasheet (323.36 KB)
MTV10N100E
Motorola
323.36 KB
Tmos power fet 10 amperes 1000 volts.
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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TMOS E-FET .™ Power Field Effect Transis.
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