MTV10N100E Datasheet - Motorola

MTV10N100E TMOS POWER FET 10 AMPERES 1000 VOLTS

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV10N100E/D Designer's TMOS E-FET .™ Power Field Effect Transistor D 3 PAK for Surface Mount N Channel Enhancement Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require surface mount components with higher power and lower RDS(on) capabilities. Thi.

MTV10N100E Features

* OSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching pe

MTV10N100E Datasheet (323.36 KB)