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MTV10N100E Datasheet - Motorola

MTV10N100E, TMOS POWER FET 10 AMPERES 1000 VOLTS

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV10N100E/D Designer's TMOS E-FET .™ Power Field Effect Transis.
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MTV10N100E_Motorola.pdf

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Datasheet Details

Part number:

MTV10N100E

Manufacturer:

Motorola

File Size:

323.36 KB

Description:

TMOS POWER FET 10 AMPERES 1000 VOLTS

Features

* OSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching pe

Applications

* that require surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage
* blocking capability without degrading performance over time. In addition, this advanced TMOS E
* FET is desig

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