Datasheet Specifications
- Part number
- MTV25N50E
- Manufacturer
- Motorola
- File Size
- 280.20 KB
- Datasheet
- MTV25N50E_Motorola.pdf
- Description
- TMOS POWER FET
Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV25N50E/D Advance Information TMOS E-FET.™ Power Field Effect Transistor D3PAK for .
Features
* uld maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the dataApplications
* that require surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageMTV25N50E Distributors
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