MTV25N50E Datasheet (Motorola)

MTV25N50E, TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV25N50E/D Advance Information TMOS E-FET.™ Power Field Effect Transistor D3PAK for Surface Mount The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor.

This allows it to be used in applications that require surface mount components with higher power and lower RDS(on) capabilities.

This high voltage MOSFET uses an advanced termination scheme to provide enh

MTV25N50E Features

* uld maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data