• Part: MTV10N100E
  • Description: TMOS POWER FET 10 AMPERES 1000 VOLTS
  • Manufacturer: Motorola Semiconductor
  • Size: 323.36 KB
Download MTV10N100E Datasheet PDF
MTV10N100E page 2
Page 2
MTV10N100E page 3
Page 3

Datasheet Summary

.. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV10N100E/D Designer's TMOS E-FET .™ Power Field Effect Transistor D 3 PAK for Surface Mount N- Channel Enhancement- Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require surface mount ponents with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage- blocking capability without degrading performance over time. In addition, this advanced TMOS E- FET is designed to withstand high...