| Part number | MTV10N100E |
|---|---|
| Datasheet | MTV10N100E_Motorola.pdf |
| File Size | 323.36 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET 10 AMPERES 1000 VOLTS |
|
|
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV10N100E/D Designer's TMOS E-FET .™ Power Field Effect Transistor D 3 PAK for Surface Mount N Channel Enhancement Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require surface mount ponents with higher...
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTV16N50E | TMOS POWER FET 16 AMPERES 500 VOLTS |
| MTV20N50E | TMOS POWER FET |
| MTV25N50E | TMOS POWER FET |
| MTV32N20E | TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM |
