MTV20N50E Datasheet - Motorola

MTV20N50E TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV20N50E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor D3PAK for Surface Mount Designer's MTV20N50E TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.240 OHM N Channel Enhancement Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require surface mount component.

MTV20N50E Features

* e resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasiti

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