* e resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasiti
MTV20N50E Datasheet (273.05 KB)
MTV20N50E
Motorola
273.05 KB
Tmos power fet.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor D3PAK for Surface .
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