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MTV20N50E Datasheet - Motorola

MTV20N50E, TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV20N50E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor D3PAK for Surface .
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MTV20N50E_Motorola.pdf

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Datasheet Details

Part number:

MTV20N50E

Manufacturer:

Motorola

File Size:

273.05 KB

Description:

TMOS POWER FET

Features

* e resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasiti

Applications

* that require surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage
* blocking capability without degrading performance over time. In addition, this advanced TMOS E
* FET is desig

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