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MTV20N50E TMOS POWER FET

MTV20N50E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV20N50E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor D3PAK for Surface .

MTV20N50E Features

* e resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasiti

MTV20N50E Applications

* that require surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage
* blocking capability without degrading performance over time. In addition, this advanced TMOS E
* FET is desig

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Datasheet Details

Part number
MTV20N50E
Manufacturer
Motorola
File Size
273.05 KB
Datasheet
MTV20N50E_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
Motorola MTV20N50E-like datasheet