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MTV16N50E Power Field Effect Transistor

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Description

MTV16N50E Advance Information TMOS E *FET.™ Power Field Effect Transistor D3PAK for Surface Mount N *Channel Enhancement *Mode Si.

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Features

* 2000 1000 Coss 0
* 10
* 5 Crss 0 5 10 15 20 25 VGS VDS GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) Figure 7a. Low Voltage Capacitance Variation 10000 1000 VGS = 0 V TJ = 25°C Ciss Coss 100 Crss 10 0 10 100 10 VDS, DRAIN
* TO

Applications

* in power supplies, converters, PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Termination

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