MTV16N50E Datasheet - ON Semiconductor

MTV16N50E Power Field Effect Transistor

MTV16N50E Advance Information TMOS E FET.™ Power Field Effect Transistor D3PAK for Surface Mount N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time. In addition, this advanced TMOS E FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain

MTV16N50E Features

* 2000 1000 Coss 0

* 10

* 5 Crss 0 5 10 15 20 25 VGS VDS GATE

* TO

* SOURCE OR DRAIN

* TO

* SOURCE VOLTAGE (VOLTS) Figure 7a. Low Voltage Capacitance Variation 10000 1000 VGS = 0 V TJ = 25°C Ciss Coss 100 Crss 10 0 10 100 10 VDS, DRAIN

* TO

MTV16N50E Datasheet (261.31 KB)