Datasheet Details
- Part number
- NGTB03N60R2DT4G
- Manufacturer
- ON Semiconductor ↗
- File Size
- 593.15 KB
- Datasheet
- NGTB03N60R2DT4G-ONSemiconductor.pdf
- Description
- IGBT
NGTB03N60R2DT4G Description
NGTB03N60R2DT4G IGBT 600V, 4.5A, N-Channel .
NGTB03N60R2DT4G Features
* Reverse Conducting II IGBT
* IGBT VCE(sat)=1.7V (typ) [IC=3A, VGE=15V]
* IGBT tf=75ns (typ)
* Diode VF=1.5V (typ) [IF=3A]
* Diode trr=65ns (typ)
NGTB03N60R2DT4G Applications
* General Purpose Inverter
Specifications Absolute Maximum Ratings at Ta=25C, Unless otherwise specified
Parameter
Collector to Emitter Voltage
Gate to Emitter Voltage Collector Current (DC) Limited by Tjmax
@Tc=25C
* 2 @Tc=100C
* 2
Collector Current (Peak)
Pulse width Llimited b
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