NGTB03N60R2DT4G Datasheet, Igbt, ON Semiconductor

NGTB03N60R2DT4G Features

• Igbt
• Reverse Conducting II IGBT
• IGBT VCE(sat)=1.7V (typ) [IC=3A, VGE=15V]
• IGBT tf=75ns (typ)
• Diode VF=1.5V (typ) [IF=3A]
• Diode trr=65ns (typ

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NGTB03N60R2DT4G

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ON Semiconductor ↗

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📄 Datasheet

Description:

Igbt.

NGTB03N60R2DT4G Application

• Applications
• General Purpose Inverter Specifications Absolute Maximum Ratings at Ta=25C, Unless otherwise specified Parameter Collecto

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NGTB03N60R2DT4G

ON Semiconductor

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