NGTB03N60R2DT4G

IGBT

ON Semiconductor

* Reverse Conducting II IGBT

* IGBT VCE(sat)=1.7V (typ) [IC=3A, VGE=15V]

* IGBT tf=75ns (typ)

* Diode VF=1.5V (typ) [IF=3A]

* Diode trr=65ns (typ)

* 5s Short Circuit Capability Applications

* General Purpose Inverter Specifications Absolute Maximum Ratings at Ta=25C,

NGTB03N60R2DT4G

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Igbt.

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NGTB03N60R2DT4G IGBT ON Semiconductor

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