NGTB05N60R2DT4G Datasheet, Igbt, ON Semiconductor

NGTB05N60R2DT4G Features

• Igbt
• Reverse Conducting II IGBT
• IGBT VCE(sat)=1.65V (typ) [IC=5A, VGE=15V]
• IGBT tf=95ns (typ)
• Diode VF=1.5V (typ) [IF=5A]
• Diode trr=70ns (ty

PDF File Details

Part number:

NGTB05N60R2DT4G

Manufacturer:

ON Semiconductor ↗

File Size:

576.53kb

Download:

📄 Datasheet

Description:

Igbt.

NGTB05N60R2DT4G Application

• Applications
• General Purpose Inverter Electrical Connection N-Channel 2,4 1 1:Gate 2:Collector 3:Emitter 3 4:Collector Specifications Ab

TAGS

NGTB05N60R2DT4G

ON Semiconductor

📁 Related Datasheet

NGTB03N60R2DT4G - IGBT (ON Semiconductor)
NGTB03N60R2DT4G IGBT 600V, 4.5A, N-Channel Features  Reverse Conducting II IGBT  IGBT VCE(sat)=1.7V (typ) [IC=3A, VGE=15V]  IGBT tf=75ns (typ) D.

NGTB10N60FG - N-Channel IGBT (ON Semiconductor)
Ordering number : ENA2283A NGTB10N60FG N-Channel IGBT 600V, 10A, VCE(sat);1.5V, TO-220F-3FS http://onsemi. Features • IGBT VCE (sat)=1.5V typ. (.

NGTB10N60R2DT4G - IGBT (ON Semiconductor)
NGTB10N60R2DT4G IGBT 600V, 10A, N-Channel .onsemi. Features  Reverse Conducting II IGBT  IGBT VCE(sat)=1.7V (typ) [IC=10A, VGE=15V]  IGBT t.

NGTB15N120FL2WG - IGBT (ON Semiconductor)
IGBT - Field Stop II NGTB15N120FL2WG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construct.

NGTB15N120FLWG - IGBT (ON Semiconductor)
NGTB15N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior per.

NGTB15N120IHLWG - IGBT (ON Semiconductor)
NGTB15N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provi.

NGTB15N120IHRWG - IGBT (ON Semiconductor)
NGTB15N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Sto.

NGTB15N120IHWG - IGBT (ON Semiconductor)
NGTB15N120IHWG Product Preview IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench constru.

NGTB15N120LWG - IGBT (ON Semiconductor)
NGTB15N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provid.

NGTB15N135IHRWG - IGBT (ON Semiconductor)
NGTB15N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Sto.