NGTG15N60S1EG - IGBT

Features

a robust and cost effective Non.
Punch Through (NPT) Trench construction, and provides superior performance in demanding switching.

onsemi

Datasheet Details

Part number	NGTG15N60S1EG
Manufacturer	onsemi
File Size	283.55 KB
Description	IGBT
Datasheet	NGTG15N60S1EG Datasheet
Additional preview pages of the NGTG15N60S1EG datasheet.

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Full PDF Text Transcription

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NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications.

Published: May 26, 2013 |