NTC160N120SC1

SiC MOSFET

ON Semiconductor

NTC160N120SC1 Features

* 1200 V @ TJ = 175°C

* Typ RDS(on) = 160 mW at VGS = 20 V, ID = 10 A

* High Speed Switching with Low Capacitance

* 100% UIL Tested

* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb

* Free 2LI (on second level interconnection) Applica

NTC160N120SC1 General Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficie.

NTC160N120SC1 Datasheet (166.55 KB)