Datasheet4U Logo Datasheet4U.com

NTC160N120SC1 SiC MOSFET

📥 Download Datasheet Datasheet Preview Page 1

Description

Silicon Carbide (SiC) MOSFET * 160 mohm, 1200 V, M1, Bare Die NTC160N120SC1 .
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon.

📥 Download Datasheet

Preview of NTC160N120SC1 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Features

* 1200 V @ TJ = 175°C
* Typ RDS(on) = 160 mW at VGS = 20 V, ID = 10 A
* High Speed Switching with Low Capacitance
* 100% UIL Tested
* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb
* Free 2LI (on second level interconnection) Applica

Applications

* Industrial Motor Drive
* UPS
* Boost Inverter
* PV Charger DATA SHEET www. onsemi. com V(BR)DSS 1200 V RDS(on) MAX 224 mW @ 20 V ID MAX 17 A N
* CHANNEL MOSFET D G S DIE DIAGRAM G S1 S2 Die Information S Wafer Diameter S Die Size S Metallization ⋅ Top ⋅

NTC160N120SC1 Distributors

📁 Related Datasheet

NTC16D-11 NTC16D-13 NTC16D-15 NTC16D-20 NTC16D-25 NTC16D-7

📌 All Tags

NTC160N120SC1 SiC MOSFET ON Semiconductor
ON Semiconductor NTC160N120SC1-like datasheet
NTC040N120SC1
NTCR013N120M3S
NTCR040N120M3S