NTCR013N120M3S Datasheet - ON Semiconductor

NTCR013N120M3S SiC MOSFET

Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest effici.

NTCR013N120M3S Features

* Typ. RDS(on) = 13 mW @ VGS = 18 V

* Low Switching Losses (Typ. EON 563 J at 75 A, 800 V) Applications

* Solar Inverters

* Electric Vehicle Charging Stations

* Uninterruptible Power Supplies (UPS)

* Energy Storage Systems

* Switch Mode Power S

NTCR013N120M3S Datasheet (167.83 KB)