NTCR013N120M3S

SiC MOSFET

ON Semiconductor

NTCR013N120M3S Features

* Typ. RDS(on) = 13 mW @ VGS = 18 V

* Low Switching Losses (Typ. EON 563 J at 75 A, 800 V) Applications

* Solar Inverters

* Electric Vehicle Charging Stations

* Uninterruptible Power Supplies (UPS)

* Energy Storage Systems

* Switch Mode Power S

NTCR013N120M3S General Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest effici.

NTCR013N120M3S Datasheet (167.83 KB)

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NTCR013N120M3S

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ON Semiconductor ↗

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Sic mosfet.

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NTCR013N120M3S SiC MOSFET ON Semiconductor

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NTCR013N120M3S Features

NTCR013N120M3S General Description

Datasheet Details

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