NTCR013N120M3S SiC MOSFET

ON Semiconductor

Description

Silicon Carbide (SiC) MOSFET * EliteSiC, 13 mohm, 1200 V, M3S, Die NTCR013N120M3S .
Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon.

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Datasheet Specifications

Part number: NTCR013N120M3S
Manufacturer: ON Semiconductor ↗
File Size: 167.83 KB
Datasheet: NTCR013N120M3S-ONSemiconductor.pdf
Description: SiC MOSFET

Features

* Typ. RDS(on) = 13 mW @ VGS = 18 V

Applications

* Solar Inverters
* Electric Vehicle Charging Stations
* Uninterruptible Power Supplies (UPS)
* Energy Storage Systems
* Switch Mode Power Supplies (SMPS) DIE DATA SHEET www. onsemi. com V(BR)DSS 1200 V RDS(on) TYP 13 mW @ 18 V ID MAX 151 A N
* CHANNE

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