NTCR040N120M3S SiC MOSFET

ON Semiconductor

Description

Silicon Carbide (SiC) MOSFET * EliteSiC, 40 mohm, 1200 V, M3S, Die Product Preview NTCR040N120M3S .
Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon.

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Datasheet Specifications

Part number: NTCR040N120M3S
Manufacturer: ON Semiconductor ↗
File Size: 249.59 KB
Datasheet: NTCR040N120M3S-ONSemiconductor.pdf
Description: SiC MOSFET

Features

* Typ. RDS(on) = 40 mW @ VGS = 18 V
* Ultra Low Gate Charge (QG(tot) = 75 nC)

Applications

* Solar Inverters
* Electric Vehicle Charging Stations
* Uninterruptible Power Supplies (UPS)
* Energy Storage Systems
* Switch Mode Power Supplies (SMPS) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to

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