NTCR040N120M3S - SiC MOSFET

ON Semiconductor

NTCR040N120M3S Datasheet Preview — Preview of NTCR040N120M3S PDF

Datasheet Details

Part number	NTCR040N120M3S
Manufacturer	ON Semiconductor ↗
File Size	249.59 KB
Description	SiC MOSFET
Datasheet	NTCR040N120M3S-ONSemiconductor.pdf

NTCR040N120M3S Product details

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon.In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Features

Typ. RDS(on) = 40 mW @ VGS = 18 V.
Ultra Low Gate Charge (QG(tot) = 75 nC).
High Speed Switching with Low Capacitance (Coss = 80 pF).

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Published: Jul 18, 2024 |