NTCR040N120M3S Datasheet - ON Semiconductor

NTCR040N120M3S SiC MOSFET

Silicon Carbide (SiC) MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest effici.

NTCR040N120M3S Features

* Typ. RDS(on) = 40 mW @ VGS = 18 V

* Ultra Low Gate Charge (QG(tot) = 75 nC)

* High Speed Switching with Low Capacitance (Coss = 80 pF) Applications

* Solar Inverters

* Electric Vehicle Charging Stations

* Uninterruptible Power Supplies (UPS)

NTCR040N120M3S Datasheet (249.59 KB)